BSC030P03NS3GAUMA1
In stock
- BSC030P03NS3GAUMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 100 A |
Rds On - Drain-Source On-Resistance | 2.3 mOhms |
Vgs th - gate-source threshold voltage | - 3.1 V |
Vgs - gate-source voltage | 25 V |
Qg - gate charge | 186 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 33 ns |
Forward transconductance - minimum | 47 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 105 ns |
Series | BSC030P03 |
Factory packing quantity | 5000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 98 ns |
Typical turn-on delay time | 27 ns |
Width | 5.15 mm |
Others include "BSC030P03NS3GAUMA1" parts
The following parts include 'BSC030P03NS3GAUMA1'
BSC030P03NS3GAUMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC030P03NS3GAUMA1
Infineon
Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC030P03NS3GAUMA1
Infineon
表面贴装型 P 通道 30V 25.4A(Ta),100A(Tc) 2.5W(Ta),125W(Tc) PG-TDSON-8-1
Learn More >
-
-
-
BSC030P03NS3GAUMA1
Infineon
Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC030P03NS3GAUMA1
Infineon
Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON EP T/R
Learn More >
-
- View All Newest Products from Omron