BSC054N04NS G
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Specification
封装 | PG-TDSON-8 |
Id-连续漏极电流 | 81 A |
长度 | 5.9 mm |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 26 nC |
高度 | 1.27 mm |
Vds-漏源极击穿电压 | 40 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
宽度 | 5.15 mm |
Vgs - 栅极-源极电压 | 10 V |
Rds On-漏源导通电阻 | 5.4 mOhms |
Pd-功率耗散 | 57 W |
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