BSC340N08NS3GATMA1
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Specification
Qg-栅极电荷 | 9.1 nC |
高度 | 1.27 mm |
Pd-功率耗散 | 32 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 23 A |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 10 V |
Rds On-漏源导通电阻 | 34 mOhms |
封装 | PG-TDSON-8 |
长度 | 5.9 mm |
宽度 | 5.15 mm |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 80 V |
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BSC340N08NS3GATMA1
Analog Devices Inc
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BSC340N08NS3GATMA1
Infineon
N沟道 Ciss:564pF Id:23A Pt:32W Qg:6.8nC RDS(on)(@10V):34mΩ VDS:80V VGS(th):2.8V/2V/3.5V -55℃~+150℃
Learn More >
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BSC340N08NS3GATMA1
Infineon
N沟道 Ciss:564pF Id:23A Pt:32W Qg:6.8nC RDS(on)(@10V):34mΩ VDS:80V VGS(th):2.8V/2V/3.5V -55℃~+150℃
Learn More >
-
-
-
BSC340N08NS3GATMA1
Infineon
N沟道 Ciss:564pF Id:23A Pt:32W Qg:6.8nC RDS(on)(@10V):34mΩ VDS:80V VGS(th):2.8V/2V/3.5V -55℃~+150℃
Learn More >
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