BSD840N H6327
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-363-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, 20 V |
Id - continuous drain current | 880 mA, 880 mA |
Rds On - Drain-Source On-Resistance | 270 mOhms, 270 mOhms |
Vgs th - gate-source threshold voltage | 300 mV, 300 mV |
Vgs - gate-source voltage | 8 V, 8 V |
Qg - gate charge | 260 pC, 260 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 900 ps, 900 ps |
Forward transconductance - minimum | 2.5 S, 2.5 S |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 2.2 ns, 2.2 ns |
Series | BSD840 |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 7.8 ns, 7.8 ns |
Typical turn-on delay time | 1.9 ns, 1.9 ns |
Width | 1.25 mm |
Unit weight | 7.500 mg |
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