BSS123NH6433XTMA1
In stock
- BSS123NH6433XTMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 190 mA |
Rds On - Drain-Source On-Resistance | 2.4 Ohms |
Vgs th - gate-source threshold voltage | 800 mV |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 900 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AECQ1000 |
Channel mode | Enhancement |
Fall time | 22 ns |
Forward transconductance - minimum | 410 mS |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 3.2 ns |
Series | BSS123 |
Factory packing quantity | 10000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 7.4 ns |
Typical turn-on delay time | 2.3 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
Others include "BSS123NH6433XTMA1" parts
The following parts include 'BSS123NH6433XTMA1'
BSS123NH6433XTMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSS123NH6433XTMA1
Infineon
表面贴装型 N 通道 100V 190mA(Ta) 500mW(Ta) SOT-23-3
Learn More >
-
-
-
BSS123NH6433XTMA1
Infineon
表面贴装型 N 通道 100V 190mA(Ta) 500mW(Ta) SOT-23-3
Learn More >
-
- View All Newest Products from Omron