BSS169 H6327
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 90 mA |
Rds On - Drain-Source On-Resistance | 12 Ohms |
Vgs th - gate-source threshold voltage | - 2.9 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 2.8 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Depletion |
Fall time | 27 ns |
Forward transconductance - minimum | 0.1 S |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 360 mW |
Product | MOSFET Small Signal |
Rise Time | 2.7 ns |
Series | BSS169 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Types | SIPMOS Small Signal Transistor |
Typical shutdown delay time | 11 ns |
Typical turn-on delay time | 2.9 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
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