BSS806NE H6327
In stock
- BSS806NE H6327 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-功率耗散 | 500 mW (1/2 W) |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 2.3 A |
Vds-漏源极击穿电压 | 20 V |
高度 | 1.1 mm |
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 8 V |
Rds On-漏源导通电阻 | 41 mOhms |
Qg-栅极电荷 | 1.7 nC |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
长度 | 2.9 mm |
宽度 | 1.3 mm |
Others include "BSS806NE H6327" parts
The following parts include 'BSS806NE H6327'
BSS806NE H6327 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSS806NEH6327
Infineon
SOT23
Learn More >
-
-
-
BSS806NEH6327XTSA1
Infineon
Trans MOSFET N-CH 20V 2.3A Automotive AEC-Q101 3-Pin SOT-23 T/R
Learn More >
-
-
-
BSS806NEH6327XTSA1
Infineon
Trans MOSFET N-CH 20V 2.3A Automotive AEC-Q101 3-Pin SOT-23 T/R
Learn More >
-
-
-
BSS806NEH6327XTSA1
Infineon
Learn More >
-
-
-
BSS806NEH6327XTSA1
Infineon
Learn More >
-
-
-
BSS806NEH6327XTSA1
Infineon
Learn More >
-
- View All Newest Products from Omron