BSZ018N04LS6ATMA1
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Specification
封装 | PQFN-8 |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 40V |
Id-连续漏极电流 | 40A |
Rds On-漏源导通电阻 | 1.8mΩ |
Vgs - 栅极-源极电压 | 10 V |
Pd-功率耗散 | 83W |
电路数量 | 1 Channel |
工作温度范围 | -55℃~+175℃ |
安装方式 | 贴片 |
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