BSZ100N06NSATMA1
In stock
- BSZ100N06NSATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | TSDSON-8 |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 40 A |
Rds On-漏源导通电阻 | 8.5 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 36 W |
电路数量 | 1 Channel |
Qg-栅极电荷 | 15 nC |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
长度 | 3.3 mm |
宽度 | 3.3 mm |
高度 | 1.1 mm |
BSZ100N06NSATMA1 Documents
Download datasheets and manufacturer documentation for BSZ100N06NSATMA1
Datasheets
Others include "BSZ100N06NSATMA1" parts
The following parts include 'BSZ100N06NSATMA1'
BSZ100N06NSATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSZ100N06NSATMA1
Analog Devices Inc
Learn More >
-
-
-
BSZ100N06NSATMA1
Infineon
表面贴装型 N 通道 60V 40A(Tc) 2.1W(Ta),36W(Tc) PG-TSDSON-8-FL
Learn More >
-
-
-
BSZ100N06NSATMA1
Infineon
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
Learn More >
-
-
-
BSZ100N06NSATMA1
Infineon
表面贴装型 N 通道 60V 40A(Tc) 2.1W(Ta),36W(Tc) PG-TSDSON-8-FL
Learn More >
-
- View All Newest Products from Omron