BSZ130N03MSGATMA1
In stock
- BSZ130N03MSGATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 30V |
安装方式 | 表面贴装型 |
封装 | PG-TSDSON-8 |
工作温度范围 | -55°C~150°C(TJ) |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Others include "BSZ130N03MSGATMA1" parts
The following parts include 'BSZ130N03MSGATMA1'
BSZ130N03MSGATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSZ130N03MSGATMA1
Analog Devices Inc
Learn More >
-
-
-
BSZ130N03MSGATMA1
Infineon
Trans MOSFET N-CH 30V 9A 8-Pin TSDSON EP T/R
Learn More >
-
-
-
BSZ130N03MSGATMA1
Infineon
表面贴装型 N 通道 30V 9A(Ta),35A(Tc) 2.1W(Ta),25W(Tc) PG-TSDSON-8
Learn More >
-
-
-
BSZ130N03MSGATMA1
Infineon
Trans MOSFET N-CH 30V 9A 8-Pin TSDSON EP T/R
Learn More >
-
-
-
BSZ130N03MSGATMA1
Infineon
Trans MOSFET N-CH 30V 9A 8-Pin TSDSON EP T/R
Learn More >
-
- View All Newest Products from Omron