BSZ130N03MSGATMA1
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Specification
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Vds-漏源极击穿电压 | 30V |
封装 | PG-TSDSON-8 |
工作温度范围 | -55°C~150°C(TJ) |
安装方式 | 表面贴装型 |
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