DF23MR12W1M1B11BOMA1
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Specification
RoHS | yes |
Product | Power MOSFET Modules |
Types | SiC Power Module |
Vf - forward voltage | 4 V |
Vgs - gate-source voltage | - 10 V, + 20 V |
Installation style | Press Fit |
Package / case | Easy1B-2 |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Fall time | 13 ns |
Id - continuous drain current | 25 A |
Operating supply voltage | - |
Pd - Power Dissipation | 20 mW |
Rds On - Drain-Source On-Resistance | 45 mOhms |
Rise Time | 7.2 ns |
Factory packing quantity | 24 |
Transistor polarity | N-Channel |
Typical shutdown delay time | 38.5 ns |
Typical turn-on delay time | 11.5 ns |
Vds - Drain-Source Breakdown Voltage | 1200 V |
Vgs th - gate-source threshold voltage | 3.5 V |
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