F3L300R07PE4
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.95 V |
Continuous collector current at 25 ° C | 300 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 940 W |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 6 |
Unit weight | 400 g |
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