F3L75R12W1H3_B27
Manufacturer:
Mfr. Part #:
F3L75R12W1H3_B27
Allchips #:
R001-F3L75R12W1H3_B27-1-H-0000-X-Y
Description:
IGBT 模块
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 1.2 kV |
Collector - emitter saturation voltage | 1.45 V |
Continuous collector current at 25 ° C | 45 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 275 W |
Package / case | EasyPack1B |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Clamp |
Factory packing quantity | 24 |
Unit weight | 24 g |
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