FS800R07A2E3B32BOSA1
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.4 V |
Continuous collector current at 25 ° C | 800 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 1.5 kW |
Package / case | HybirdPack2 |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | + /- 20 V |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Factory packing quantity | 3 |
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