FS50R07W1E3_B11A
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.7 V |
Continuous collector current at 25 ° C | 70 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 205 W |
Package / case | EasyPack1B |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | FS50R07W1 |
Factory packing quantity | 24 |
Unit weight | 24 g |
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