FZ1200R33KF2C
Manufacturer:
Mfr. Part #:
FZ1200R33KF2C
Allchips #:
R001-FZ1200R33KF2C-1-H-0000-X-Y
Description:
IGBT模块
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Specification
RoHS | no |
Configuration | Triple Common Emitter Common Gate |
Collector - Emitter maximum voltage VCEO | 3300 V |
Collector - emitter saturation voltage | 3.4 V |
Continuous collector current at 25 ° C | 2000 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 14.5 kW |
Package / case | IS5a ( 62 mm )-9 |
The maximum working temperature | + 125 C |
Height | 38 mm |
Length | 190 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 1 |
Width | 140 mm |
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