FZ600R12KE3
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 1.7 V |
Continuous collector current at 25 ° C | 900 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 2.8 kW |
Package / case | 62 mm |
The maximum working temperature | + 125 C |
Height | 36.5 mm |
Length | 106.4 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Width | 61.4 mm |
Unit weight | 340 g |
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