IDH04SG60C
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Specification
RoHS | yes |
Product | Schottky Silicon Carbide Diodes |
Installation style | Through Hole |
Package / case | TO-220-2 |
If - Forward current | 4 A |
Vrrm - repeat the reverse voltage | 600 V |
Vf - forward voltage | 2.1 V |
Ifsm - Forward Surge Current | 18 A |
Configuration | Single |
Technology | SiC |
Ir - Reverse current | 0.3 uA |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | IDH04SG60 |
Height | 9.45 mm (Max) |
Length | 10.2 mm (Max) |
Range of working temperature | - 55 C to + 175 C |
Pd - Power Dissipation | 43 W |
Factory packing quantity | 500 |
trr - Reverse recovery time | 10 ns |
Types | Schottky Diode |
Width | 4.5 mm (Max) |
Unit weight | 6 g |
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