IHW50N65R5XKSA1
Manufacturer:
Mfr. Part #:
IHW50N65R5XKSA1
Allchips #:
R001-IHW50N65R5XKSA1-1-H-2201-X-N
Description:
Trans IGBT Chip N-CH 650V 80A 282W 3-Pin(3+Tab) TO-247 Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.6 V |
Gate / emitter maximum voltage | 20 V |
Continuous collector current at 25 ° C | 80 A |
Pd - Power Dissipation | 282 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | RC |
Collector maximum continuous current Ic | 50 A |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 240 |
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IGBT 650V 80A 282W Through Hole PG-TO247-3
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