IKD10N60RF
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-252-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.2 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 20 A |
Pd - Power Dissipation | 150 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 2500 |
Unit weight | 340 mg |
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