IKD10N60RFATMA1
Manufacturer:
Mfr. Part #:
IKD10N60RFATMA1
Allchips #:
R001-IKD10N60RFATMA1-1-H-0000-X-Y
Description:
IGBT 600V 20A 150W PG-TO252-3
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IKD10N60RFATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IKD10N60RFATMA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IKD10N60RFATMA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-252-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.2 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 20 A |
Pd - Power Dissipation | 150 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 2500 |
Others include "IKD10N60RFATMA1" parts
The following parts include 'IKD10N60RFATMA1'
IKD10N60RFATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search