IKP20N65H5
In stock
- IKP20N65H5 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-220-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.65 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 42 A |
Pd - Power Dissipation | 125 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | TRENCHSTOP 5 H5 |
Gate-emitter leakage current | 100 nA |
Height | 15.95 mm |
Length | 10.36 mm |
Range of working temperature | - 40 C to + 175 C |
Factory packing quantity | 500 |
Width | 4.57 mm |
Unit weight | 6 g |
Others include "IKP20N65H5" parts
The following parts include 'IKP20N65H5'
IKP20N65H5 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IKP20N65H5XKSA1
Infineon
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
Learn More >
-
-
-
IKP20N65H5XKSA1
Infineon
IGBT 沟道 650V 42A 125W 通孔 PG-TO220-3
Learn More >
-
- View All Newest Products from Omron