IKW75N60H3FKSA1
In stock
- IKW75N60H3FKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.85 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 80 A |
Pd - Power Dissipation | 428 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | HighSpeed 3 |
Gate-emitter leakage current | 100 nA |
Height | 20.7 mm |
Length | 15.87 mm |
Factory packing quantity | 240 |
Width | 5.31 mm |
Unit weight | 4.430 g |
Others include "IKW75N60H3FKSA1" parts
The following parts include 'IKW75N60H3FKSA1'
IKW75N60H3FKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IKW75N60H3FKSA1
Infineon
Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
IKW75N60H3FKSA1
Infineon
Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
IKW75N60H3FKSA1
Infineon
IGBT Trench Field Stop 600V 80A 428W Through Hole PG-TO247-3
Learn More >
-
- View All Newest Products from Omron