IKW75N65EL5XKSA1
In stock
- IKW75N65EL5XKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.1 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 80 A |
Pd - Power Dissipation | 536 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | TRENCHSTOP 5 L5 |
Gate-emitter leakage current | 100 nA |
Others include "IKW75N65EL5XKSA1" parts
The following parts include 'IKW75N65EL5XKSA1'
IKW75N65EL5XKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IKW75N65EL5XKSA1
Infineon
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
IKW75N65EL5XKSA1
Infineon
IGBT 650V 80A 536W 通孔 PG-TO247-3
Learn More >
-
-
-
IKW75N65EL5XKSA1
Infineon
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
IKW75N65EL5XKSA1
Infineon
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
IKW75N65EL5XKSA1
Infineon
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
- View All Newest Products from Omron