IPA65R190C7XKSA1
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Specification
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220FP-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 8 A |
Rds On - Drain-Source On-Resistance | 168 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 23 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 9 ns |
Height | 16.15 mm |
Length | 10.65 mm |
Pd - Power Dissipation | 30 W |
Rise Time | 11 ns |
Series | CoolMOS C7 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 54 ns |
Typical turn-on delay time | 11 ns |
Width | 4.85 mm |
Unit weight | 6 g |
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