IPA65R190E6XKSA1
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Specification
安装方式 | 通孔 |
工作温度范围 | -55°C~150°C(TJ) |
Pd-功率耗散 | 34W(Tc) |
封装 | PG-TO220整包 |
Vds-漏源极击穿电压 | 650V |
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IPA65R190E6XKSA1
Infineon
MOSFET N-CH 650V 20.2A TO220
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