FDC658P
In stock
- FDC658P Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | SSOT-6 |
Vds-漏源极击穿电压 | 30 V |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
高度 | 1.1 mm |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 1.6 W |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 50 mOhms |
Id-连续漏极电流 | 4 A |
长度 | 2.9 mm |
宽度 | 1.6 mm |
Others include "FDC658P" parts
The following parts include 'FDC658P'
FDC658P Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
FDC658P
ON
Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
Learn More >
-
-
-
FDC658P
ON
表面贴装型 P 通道 30V 4A(Ta) 1.6W(Ta) SuperSOT™-6
Learn More >
-
-
-
FDC658P
ON
Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
Learn More >
-
-
-
FDC658P
ON
表面贴装型 P 通道 30V 4A(Ta) 1.6W(Ta) SuperSOT™-6
Learn More >
-
-
-
FDC658AP
ON
FDC658AP
Learn More >
-
-
-
FDC658AP
ON
FDC658AP
Learn More >
-
-
-
FDC658AP
ON
FDC658AP
Learn More >
-
-
-
FDC658AP
ON
FDC658AP
Learn More >
-
- View All Newest Products from Omron