IPAN80R450P7XKSA1
In stock
- IPAN80R450P7XKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220FP-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - continuous drain current | 11 A |
Rds On - Drain-Source On-Resistance | 0.38 Ohms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 24 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Pd - Power Dissipation | 29 W |
Rise Time | 6 ns |
Series | CoolMOS P7 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 40 ns |
Typical turn-on delay time | 10 ns |
Unit weight | 2 g |
Others include "IPAN80R450P7XKSA1" parts
The following parts include 'IPAN80R450P7XKSA1'
IPAN80R450P7XKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPAN80R450P7XKSA1
Infineon
通孔 N 通道 800V 11A(Tc) 29W(Tc) PG-TO220-3-31 整包
Learn More >
-
- View All Newest Products from Omron