IPB024N10N5ATMA1
In stock
- IPB024N10N5ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Installation style | SMD/SMT |
Package / case | TO-263-7 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 180 A |
Rds On - Drain-Source On-Resistance | 2 mOhms |
Vgs th - gate-source threshold voltage | 2.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 138 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | 1 N-Channel |
Channel mode | Enhancement |
Fall time | 13 ns |
Forward transconductance - minimum | 105 S |
Pd - Power Dissipation | 250 W |
Rise Time | 12 ns |
Series | OptiMOS 5 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 42 ns |
Typical turn-on delay time | 20 ns |
Others include "IPB024N10N5ATMA1" parts
The following parts include 'IPB024N10N5ATMA1'
IPB024N10N5ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB024N10N5ATMA1
Infineon
MOSFET N-CH 100V 180A TO263-7
Learn More >
-
-
-
IPB024N10N5ATMA1
Infineon
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron