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IPB036N12N3GATMA1
Manufacturer:
Mfr. Part #:
IPB036N12N3GATMA1
Allchips #:
R001-IPB036N12N3GATMA1-1-H-0000-X-Y
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-263-7 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Id - continuous drain current | 180 A |
| Rds On - Drain-Source On-Resistance | 2.9 mOhms |
| Vgs th - gate-source threshold voltage | 2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 211 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 21 ns |
| Forward transconductance - minimum | 98 S |
| Height | 4.4 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 300 W |
| Rise Time | 52 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 76 ns |
| Typical turn-on delay time | 35 ns |
| Width | 9.25 mm |
| Unit weight | 1.810 g |
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