IPB038N12N3GATMA1
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Specification
Rds On-漏源导通电阻 | 3.2 mOhms |
Pd-功率耗散 | 300 W |
Id-连续漏极电流 | 120 A |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 211 nC |
封装 | TO-263-3 |
宽度 | 9.25 mm |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
高度 | 4.4 mm |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 120 V |
长度 | 10 mm |
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