IPB083N10N3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 80 A |
Rds On - Drain-Source On-Resistance | 7.2 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 55 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 8 ns |
Forward transconductance - minimum | 45 S |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 42 ns |
Series | OptiMOS 3 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 31 ns |
Typical turn-on delay time | 18 ns |
Width | 9.25 mm |
Unit weight | 2 g |
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