IPB083N10N3G
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Specification
Pd-功率耗散 | 125W(Tc) |
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 3.5V @ 75uA |
Rds On-漏源导通电阻 | 8.3mΩ @ 73A,10V |
Vds-漏源极击穿电压 | 100V |
封装 | TO-263-2 |
Id-连续漏极电流 | 80A(Tc) |
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