IPB70N10S312ATMA1
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Mfr. Part #:
IPB70N10S312ATMA1
Allchips #:
R001-IPB70N10S312ATMA1-1-H-2230-X-N
Description:
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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Specification
| Qg-栅极电荷 | 66 nC |
| 高度 | 4.4 mm |
| Vds-漏源极击穿电压 | 100 V |
| 工作温度范围 | - 55 C~+ 175 C |
| Vgs - 栅极-源极电压 | 20 V |
| Id-连续漏极电流 | 70 A |
| 安装方式 | SMD/SMT |
| Pd-功率耗散 | 125 W |
| 封装 | TO-263-3 |
| 长度 | 10 mm |
| 宽度 | 9.25 mm |
| 晶体管极性 | MOSFET |
| Rds On-漏源导通电阻 | 9.4 mOhms |
| 电路数量 | 1 Channel |
| 资格等级 | AEC-Q101 |
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