IPB70N10S312ATMA1
In stock
- IPB70N10S312ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 66 nC |
高度 | 4.4 mm |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Id-连续漏极电流 | 70 A |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 100 V |
Pd-功率耗散 | 125 W |
封装 | TO-263-3 |
长度 | 10 mm |
宽度 | 9.25 mm |
Rds On-漏源导通电阻 | 9.4 mOhms |
晶体管极性 | MOSFET |
资格等级 | AEC-Q101 |
电路数量 | 1 Channel |
Others include "IPB70N10S312ATMA1" parts
The following parts include 'IPB70N10S312ATMA1'
IPB70N10S312ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB70N10S312ATMA1
Infineon
表面贴装型 N 通道 100V 70A(Tc) 125W(Tc) PG-TO263-3-2
Learn More >
-
-
-
IPB70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron