IPBE65R050CFD7AATMA1
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Specification
Id-连续漏极电流 | 45 A |
Rds On-漏源导通电阻 | 0.092 Ohms |
Qg-栅极电荷 | 102 nC |
Pd-功率耗散 | 227 W |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | - 20 V, + 20 V |
封装 | PG-TO263-7-11 |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 650 V |
安装方式 | SMD/SMT |
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