IPC100N04S5L2R6ATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 2 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 16 V |
Qg - gate charge | 55 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Pd - Power Dissipation | 75 W |
Rise Time | 3 ns |
Series | N Channel |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 20 ns |
Typical turn-on delay time | 4 ns |
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IPC100N04S5L2R6ATMA1
Infineon
表面贴装型 N 通道 40V 100A(Tc) 75W(Tc) PG-TDSON-8-34
Learn More >
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IPC100N04S5L2R6ATMA1
Infineon
表面贴装型 N 通道 40V 100A(Tc) 75W(Tc) PG-TDSON-8-34
Learn More >
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