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IPD050N10N5ATMA1
Manufacturer:
Mfr. Part #:
IPD050N10N5ATMA1
Allchips #:
R001-IPD050N10N5ATMA1-1-H-0000-X-Y
Description:
MOSFET N-CH 100V 80A TO252-3
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | DPAK-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - continuous drain current | 80 A |
| Rds On - Drain-Source On-Resistance | 4.3 mOhms |
| Vgs th - gate-source threshold voltage | 2.2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 64 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 7 ns |
| Forward transconductance - minimum | 48 S |
| Pd - Power Dissipation | 150 W |
| Rise Time | 7 ns |
| Series | OptiMOS 5 |
| Factory packing quantity | 2500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 27 ns |
| Typical turn-on delay time | 13 ns |
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