IPD26N06S2L35ATMA2
In stock
- IPD26N06S2L35ATMA2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 30 A |
Rds On - Drain-Source On-Resistance | 27 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 24 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 11 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 68 W |
Rise Time | 18 ns |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 26 ns |
Typical turn-on delay time | 5 ns |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IPD26N06S2L35ATMA2" parts
The following parts include 'IPD26N06S2L35ATMA2'
IPD26N06S2L35ATMA2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPD26N06S2L35ATMA2
Analog Devices Inc
Learn More >
-
-
-
IPD26N06S2L35ATMA2
Infineon
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD26N06S2L35ATMA2
Infineon
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD26N06S2L35ATMA2
Infineon
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD26N06S2L35ATMA2
Infineon
表面贴装型 N 通道 55V 30A(Tc) 68W(Tc) PG-TO252-3-11
Learn More >
-
- View All Newest Products from Omron