IPD33CN10NGATMA1
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Specification
Vgs - 栅极-源极电压 | 20 V |
Id-连续漏极电流 | 27 A |
晶体管极性 | MOSFET |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Qg-栅极电荷 | 18 nC |
高度 | 2.3 mm |
Vds-漏源极击穿电压 | 100 V |
Pd-功率耗散 | 58 W |
Rds On-漏源导通电阻 | 25 mOhms |
长度 | 6.5 mm |
宽度 | 6.22 mm |
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