STD35P6LLF6
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Specification
安装方式 | SMD/SMT |
Pd-功率耗散 | 70 W |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 60 V |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 10 V |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 28 mOhms |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 35 A |
Qg-栅极电荷 | 30 nC |
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