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IPD60R360P7SAUMA1
Manufacturer:
Mfr. Part #:
IPD60R360P7SAUMA1
Allchips #:
R001-IPD60R360P7SAUMA1-1-H-0000-X-N
Description:
表面贴装型 N 通道 600V 9A（Tc） 41W（Tc） PG-TO252-3
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-252-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 9 A |
| Rds On - Drain-Source On-Resistance | 0.3 Ohms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 13 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 10 ns |
| Pd - Power Dissipation | 41 W |
| Rise Time | 7 ns |
| Series | CoolMOS P7 |
| Factory packing quantity | 2500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 42 ns |
| Typical turn-on delay time | 8 ns |
| Unit weight | 340 mg |
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表面贴装型 N 通道 600V 9A（Tc） 41W（Tc） PG-TO252-3
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