IPD65R600C6BTMA1
Manufacturer:
Mfr. Part #:
IPD65R600C6BTMA1
Allchips #:
R001-IPD65R600C6BTMA1-1-H-1901-X-N
Description:
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R
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Specification
| 封装 | PG-TO252-3 |
| 电路数量 | 1 Channel |
| 安装方式 | SMD/SMT |
| Id-连续漏极电流 | 7.3 A |
| 工作温度范围 | - 55 C~+ 150 C |
| Pd-功率耗散 | 63 W |
| 长度 | 6.5 mm |
| 宽度 | 6.22 mm |
| Vds-漏源极击穿电压 | 650 V |
| 晶体管极性 | MOSFET |
| Rds On-漏源导通电阻 | 540 mOhms |
| Qg-栅极电荷 | 23 nC |
| 高度 | 2.3 mm |
| Vgs - 栅极-源极电压 | 20 V |
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