FQPF19N10
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Specification
Id-连续漏极电流 | 13.6 A |
封装 | TO-220F-3 |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Rds On-漏源导通电阻 | 100 mOhms |
Vds-漏源极击穿电压 | 100 V |
长度 | 10.36 mm |
宽度 | 4.9 mm |
Pd-功率耗散 | 38 W |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 25 V |
高度 | 16.07 mm |
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