IPI086N10N3GXKSA1
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Specification
Vds-漏源极击穿电压 | 100V |
封装 | PG-TO262-3 |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
安装方式 | 通孔 |
工作温度范围 | -55°C~175°C(TJ) |
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