IPI086N10N3GXKSA1
In stock
- IPI086N10N3GXKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 100V |
封装 | PG-TO262-3 |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
安装方式 | 通孔 |
工作温度范围 | -55°C~175°C(TJ) |
Others include "IPI086N10N3GXKSA1" parts
The following parts include 'IPI086N10N3GXKSA1'
IPI086N10N3GXKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPI086N10N3GXKSA1
Infineon
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube
Learn More >
-
-
-
IPI086N10N3GXKSA1
Infineon
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube
Learn More >
-
-
-
IPI086N10N3GXKSA1
Infineon
通孔 N 通道 100V 80A(Tc) 125W(Tc) PG-TO262-3
Learn More >
-
- View All Newest Products from Omron