IPL65R099C7AUMA1
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Specification
Technology | Si |
Installation style | SMD/SMT |
Package / case | VSON-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 21 A |
Rds On - Drain-Source On-Resistance | 88 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 45 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 12 ns |
Height | 1.1 mm |
Length | 8 mm |
Pd - Power Dissipation | 128 W |
Rise Time | 5 ns |
Series | CoolMOS C7 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 89 ns |
Typical turn-on delay time | 11 ns |
Width | 8 mm |
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IPL65R099C7AUMA1
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表面贴装型 N 通道 650V 21A(Tc) 128W(Tc) PG-VSON-4
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