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IPL65R099C7AUMA1
Manufacturer:
Mfr. Part #:
IPL65R099C7AUMA1
Allchips #:
R001-IPL65R099C7AUMA1-1-H-2301-X-N
Description:
Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
ECAD Model:
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Specification
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | VSON-4 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 21 A |
| Rds On - Drain-Source On-Resistance | 88 mOhms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 45 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 12 ns |
| Height | 1.1 mm |
| Length | 8 mm |
| Pd - Power Dissipation | 128 W |
| Rise Time | 5 ns |
| Series | CoolMOS C7 |
| Factory packing quantity | 3000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 89 ns |
| Typical turn-on delay time | 11 ns |
| Width | 8 mm |
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