IPN60R1K0CEATMA1
In stock
- IPN60R1K0CEATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 6.8 A |
Rds On - Drain-Source On-Resistance | 2.34 Ohms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 13 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 13 ns |
Height | 1.6 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 5 W |
Rise Time | 8 ns |
Series | CoolMOS CE |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 60 ns |
Typical turn-on delay time | 10 ns |
Width | 3.5 mm |
Unit weight | 112 mg |
Others include "IPN60R1K0CEATMA1" parts
The following parts include 'IPN60R1K0CEATMA1'
IPN60R1K0CEATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPN60R1K0CEATMA1
Infineon
表面贴装型 N 通道 600V 6.8A(Tc) 5W(Tc) PG-SOT223
Learn More >
-
-
-
IPN60R1K0CEATMA1
Infineon
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
Learn More >
-
-
-
IPN60R1K0CEATMA1
Infineon
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
Learn More >
-
-
-
IPN60R1K0CEATMA1
Infineon
表面贴装型 N 通道 600V 6.8A(Tc) 5W(Tc) PG-SOT223
Learn More >
-
- View All Newest Products from Omron